Experimental Extraction of the Charge Centroid in SiCN-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method
Experimental Extraction of the Charge Centroid in SiCN-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method
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使用恒流载流子注入方法实验提取 SiCN 基电荷捕获存储器中的电荷质心
DOI：
10.1149/07532.0051ecst
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Kiyoteru Kobayashi
中科院分区：
文献类型：
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作者：
Sheikh Rashel Al Ahmed;Kaihei Kato;Kiyoteru Kobayashi
采用恒流空穴注入法研究了阻挡氧化层-SiCN-隧穿氧化层叠层电荷俘获型存储电容器的空穴俘获特性。我们评估的电荷质心的空穴被困在SiCN和氮化硅电荷捕获膜。电荷质心最初位于31.6 nm厚的SiCN膜中的11 nm附近和30.4 nm厚的氮化硅膜中的13 nm附近，然后向阻挡氧化物-电荷捕获膜界面移动。
We studied the hole trapping characteristics of the charge trapping type memory capacitors with a blocking oxide-SiCN-tunneling oxide stacked film using the constant-current hole injection method. We evaluated the charge centroid of holes trapped in the SiCN and silicon nitride charge trapping films. The charge centroid was initially located around 11 nm in 31.6-nm-thick SiCN film and 13 nm in 30.4-nm-thick silicon nitride film, and then moved toward the blocking oxide-charge trapping film interface.