Self-organized GaN/A1N hexagonal quantum-dots: strain distribution and electronic structure
Self-organized GaN/A1N hexagonal quantum-dots: strain distribution and electronic structure
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DOI：
10.1088/1674-1056/17/9/055
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发表时间：
2008-09
影响因子：
1.7
通讯作者：
Liu Yu-min;Yu Zhong-Yuan;Ren Xiaomin;Xu Zi-Ruan
中科院分区：
文献类型：
--
作者：
Liu Yu-min;Yu Zhong-Yuan;Ren Xiaomin;Xu Zi-Ruan
本文提出了一种计算自组织GaN/AlN六角量子点内部及其周围应变分布的有限元方法。该模型是基于连续弹性理论，这是能够处理的量子点与任意形状。本文采用了一种截顶六棱锥形状的量子点。通过求解包含应变修正约束势和极化效应的三维有效质量薛定谔方程，计算了GaN/AlN系统的电子能级.计算结果支持了文献中发表的结果。
This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AIN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AIN system are calculated by solving a three-dimension effective mass Shrodinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.