Interface Fermi States of LaAlO3/SrTiO3 and Related Heterostructures
Interface Fermi States of LaAlO3/SrTiO3 and Related Heterostructures
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DOI：
10.1103/physrevlett.110.137601
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发表时间：
2013-03-25
影响因子：
8.6
通讯作者：
Triscone, J. -M.
中科院分区：
文献类型：
--
作者：
Cancellieri, C.;Reinle-Schmitt, M. L.;Triscone, J. -M.
用软X射线光电子能谱研究了不同厚度的LaAlO_3/SrTiO_3和（LaAlO_3）（x）（SrTiO_3）（1-x）/SrTiO_3异质结的界面。用共振光电子能谱探测了Ti的价带和费米边。起源于部分填充的Ti 3d轨道的费米边缘信号的存在下，只发现在导电样品。对于低于临界厚度的绝缘样品，没有检测到费米边缘信号。此外，费米强度的角度依赖性允许确定垂直于界面的导电电子密度的空间范围。DOI：10.1103/PhysRevLett.110.137601
The interfaces of LaAlO3/SrTiO3 and (LaAlO3)(x)(SrTiO3)(1-x)/SrTiO3 heterostructures have been investigated by soft x-ray photoelectron spectroscopy for different layer thicknesses across the insulator-to-metal interface transition. The valence band and Fermi edge were probed using resonant photoemission across the Ti L-2,L-3 absorption edge. The presence of a Fermi-edge signal originating from the partially filled Ti 3d orbitals is only found in the conducting samples. No Fermi-edge signal could be detected for insulating samples below the critical thickness. Furthermore, the angular dependence of the Fermi intensity allows the determination of the spatial extent of the conducting electron density perpendicular to the interface. DOI: 10.1103/PhysRevLett.110.137601