Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment
Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment
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通过低动能粒子轰击进行极低温外延硅生长
DOI：
10.1143/jjap.27.l2146
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
H. Iwabuchi
中科院分区：
文献类型：
--
作者：
T. Ohmi;Kiyohiko Matsudo;T. Shibata;T. Ichikawa;H. Iwabuchi
低动能Ar离子已被用来控制薄膜生长的动力学以及执行非常有效的预沉积基底表面清洁。结果，具有完美结晶度的外延硅层在低至 350°C 的温度下在硅衬底上生长。所生长的外延硅薄膜的电阻率低至0.0018 Ωcm，表明无需任何热处理即可激活杂质。在 350°C 温度下在 p 型衬底上直接生长 n 型外延硅层形成的 p-n 结在 5 V 反向偏压下表现出 1.88×10-9 A/cm2 的低反向电流。
Low-kinetic-energy Ar ions have been utilized to control the kinetics of thin film growth as well as to perform very effective predeposition substrate surface cleaning. As a result, epitaxial silicon layers with a perfect crystallinity are grown on silicon substrates at a temperature as low as 350°C. The resistivity of an as-grown epitaxial silicon film as low as 0.0018 Ωcm has been obtained, showing the impurity activation without any heat treatment. A p-n junction formed by growing an n-type epitaxial silicon layer directly on a p-type substrate at 350°C exhibited a low reverse current of 1.88×10-9 A/cm2 at a reverse bias of 5 V.