Curved OLED microdisplays
Curved OLED microdisplays
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DOI：
10.1002/jsid.824
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发表时间：
2019-07
影响因子：
2.3
通讯作者：
T. Maindron;B. Chambion;Marion Provost;A. Vandeneynde;P. Peray;M. Zussy;J. Dechamp;C. Rossat;Stéphanie Gonnin
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文献类型：
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作者：
T. Maindron;B. Chambion;Marion Provost;A. Vandeneynde;P. Peray;M. Zussy;J. Dechamp;C. Rossat;Stéphanie Gonnin
CEA-LETI的CMOS衬底减薄技术背景（历史上为硅通孔技术以及最近为提供用于IR和可见光谱的弯曲图像传感器而开发）已被应用于实现基于弯曲OLED的微显示器。它将表明，在硅晶片上制造的测试OLED以及873 × 500 WVGA，0.38“对角线，和创新的1920 × 1200 WUXGA，1”对角线，基于CMOS的微显示器可以在R = 45 mm的曲率半径（1D）弯曲，而不会对电路电气特性产生负面影响。这一特性可以实现系统和应用的重大创新，因为它可以帮助重新设计更简单、更轻的光学引擎系统，与曲面图像传感器的方式相同。这些结果可归因于新的保护性硬涂层的集成，该保护性硬涂层已与稳健的薄膜封装结合使用以分别保护OLED免受机械侵入（来自工艺步骤和处理）和大气的氧化气体的影响。这些结果是在欧盟资助的H2020项目的框架内产生的，该项目被称为大型成本效益OLED微型显示器（LOMID及其应用）。
Technical background for CMOS substrate thinning of CEA‐LETI (historically developed for through silicon via technology as well as for more recent activity to provide curved image sensors, for IR as well as for visible spectra) has been applied to realize curved OLED‐based microdisplays. It will be shown that test OLEDs made onto silicon wafers as well as 873 × 500 WVGA, 0.38″ diagonal, and an innovative 1920 × 1200 WUXGA, 1″diagonal, CMOS‐based microdisplays can be curved at R = 45 mm radius of curvature (1D) with no negative impact onto the circuit electrical characteristics. This feature can allow significant innovation on the system and application because it can help to redesign simpler and lighter optical engine systems, in the same manner as for curved image sensors. These results can be obtained owing to the integration of a new protective hard coat layer that has been used in conjunction with a robust thin‐film encapsulation to protect OLEDs from mechanical ingress (from process steps and handling) and oxidizing gas of the atmosphere, respectively. Results have been produced within the framework of the EU‐funded, H2020 project, called Large cost‐effective OLED MIcroDisplays (LOMID and their applications).