Charge contrast imaging of material growth and defects in environmental scanning electron miscroscopy--linking electron emission and cathodoluminescence
Charge contrast imaging of material growth and defects in environmental scanning electron miscroscopy--linking electron emission and cathodoluminescence
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环境扫描电子显微镜中材料生长和缺陷的电荷对比成像——连接电子发射和阴极发光
作者：
Griffin
在可变压力或环境扫描电子显微镜中，已经确定了一种基于电子的技术，用于成像晶体缺陷分布，例如非导电材料和导电性差的材料中的材料生长历史。可以在合适的材料中成像在介观尺度的晶格相干性的变化。该技术被称为电荷对比成像（CCI），它提供的图像与适当材料中的发射光或阴极射线发光完全相关。这种相关性将阴极射线发光和电子发射联系起来。用于观察这些图像的特定操作条件反映了电子束、由腔室中的电子-气体相互作用产生的正离子、偏置检测器和样品之间的复杂相互作用。净结果似乎是抑制所有，但非常接近表面的电子发射从样品，可能从几个纳米的顺序。因此，CCI也对非常低水平的表面污染物敏感。对各种材料内部结构的成功成像表明，该技术将成为一种重要的研究工具。
An electron-based technique for the imaging of crystal defect distribution such as material growth histories in non- and poorly conductive materials has been identified in the variable pressure or environmental scanning electron microscope. Variations in lattice coherence at the meso-scale can be imaged in suitable materials. Termed charge contrast imaging (CCI), the technique provides images that correlate exactly with emitted light or cathodoluminescence in suitable materials. This correlation links cathodoluminescence and an electron emission. The specific operating conditions for observation of these images reflect a complex interaction between the electron beam, the positive ions generated by electron-gas interactions in the chamber, a biased detector, and the sample. The net result appears to be the suppression of all but very near surface electron emission from the sample, probably from of the order of a few nanometres. Consequently, CCI are also sensitive to very low levels of surface contaminants. Successful imaging of internal structures in a diverse range of materials indicate that the technique will become an important research tool.