Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region
Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region
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DOI：
10.1016/j.nanoen.2014.11.003
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发表时间：
2015-01-01
期刊：
影响因子：
17.6
通讯作者：
Amano, Hiroshi
中科院分区：
文献类型：
--
作者：
Jung, Byung Oh;Bae, Si-Young;Amano, Hiroshi
采用金属有机化学气相沉积（MOCVD）技术合成了高度有序、位置可控的氮化镓（GaN）纳米线基多量子阱（mqw）核壳结构阵列。我们研究了使用GaN纳米线阵列作为生长InxGa1-xN/GaN MQWs的基础模板的可能性。氮化镓纳米线的三个不同晶面（c（-）、m（-）和半极面）上的mqw表现出不同的结构特性。采用高分辨率透射电镜（HR-TEM）研究了InGaN/GaN核壳阵列的结构特征。我们还研究了MQW核壳结构纳米阵列的光学性质。通过光致发光（PL）和阴极发光（CL）测量测定了InGaN/GaN核壳结构阵列的发光特性。单色CL图像清晰地显示了InGaN/GaN MQW共轴结构的发光行为。在GaN纳米线核壳结构中观察到两个可区分的发光峰。光发射特性主要取决于由氮化镓的不同晶面产生的mqw的性质。此外，随氮化镓纳米线m面面积的不同，光发射强度表现出不同的行为。本研究结果表明，氮化镓纳米线阵列可以作为下一代发光二极管（led）的良好替代基础模板。(C) 2014 Elsevier Ltd.版权所有。
Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core-shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of InxGa1-xN/GaN MQWs. The MQWs on three different crystal facets (c(-), m(-), and semipolar-plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core-shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core-shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core-shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core-shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire m-plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs). (C) 2014 Elsevier Ltd. All rights reserved.