Interaction of the dual effects triggered by A1N interlayers in thick GaN grown on 3C-SiC/Si substrates
Interaction of the dual effects triggered by A1N interlayers in thick GaN grown on 3C-SiC/Si substrates
复制标题
3C-SiC/Si 衬底上生长的厚 GaN 中的 A1N 中间层触发的双重效应的相互作用
DOI：
10.1088/0022-3727/45/38/385101
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
K Kawamura
中科院分区：
文献类型：
--
作者：
H Fang;Y Takaya;H Miyake;K Hiramatsu;H Asamura;K Kawamura
在本工作中，用低温阴极发光光谱研究了在3C-SiC/Si(111)衬底上由多个AlN中间层(ILS)实现的GaN厚层的应力分布。在AlN ILS上方的顶层GaN中，压应力的松弛是由其不均匀的发光特性决定的。通过横截面透射电子显微镜观察到了由螺纹位错转变而来的失配位错。分析证实，位错的转变过程应占压应力松弛的一部分。因此，在AlN离子液体诱导的压应力诱导和位错转变效应之间提出了一种折衷方案。在该模型中，GaN/AlN多层结构中分子轨道的平均长度为L=84 nm。
In this work, the stress distribution of a thick GaN layer, which was realized with multiple AlN interlayers (ILs) on a 3C-SiC/Si (1 1 1) substrate, was mapped by low-temperature cathodoluminescence spectroscopy. A relaxation of compressive stress was distinguished in the top GaN layers above the AlN ILs by the inhomogeneous luminescent property. Through cross-sectional transmission electron microscopy, misfit dislocations (MDs) transformed from threading dislocations were observed. Analysis confirmed that the transformation process of dislocations should account for a part of compressive stress relaxation. As a result, a trade-off between compressive stress induction and dislocation transformation effects, both of which were induced by the AlN ILs, was proposed. In this model, the mean length of MDs in the GaN/AlN multi-layer structure was evaluated as L= 84 nm.