Enhancement of GaAs solar cell performance by using a ZnO sol-gel anti-reflection coating
Enhancement of GaAs solar cell performance by using a ZnO sol-gel anti-reflection coating
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DOI：
10.1016/j.solmat.2014.01.007
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发表时间：
2014-04-01
影响因子：
6.9
通讯作者：
Manasreh, M. O.
中科院分区：
文献类型：
--
作者：
Makableh, Y. F.;Vasan, R.;Manasreh, M. O.
The performance of a GaAs p-n junction solar cell was investigated by coating the device with 110 nm thick ZnO sol-gel anti-reflection film. A post-furnace thermal annealing at 150 degrees C for 30 min was performed on the ZnO film after it was spin coated on the device with a speed of 8000 rpm. Ellipsometry was used to measure the reflectance, thickness, and the refractive index of the ZnO film. The solar cell performance was investigated by using the current-voltage technique from which the power conversion efficiency was extracted. The spectral response and quantum efficiency were also measured for the solar cell. An enhancement, after utilizing the ZnO anti-reflection coating, was observed on the order of 32%, 38, and 51% for the power conversion efficiency, spectral response, and quantum efficiency, respectively. (C) 2014 Elsevier B.V. All rights reserved.
