Cubic III-nitrides: potential photonic materials
Cubic III-nitrides: potential photonic materials
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立方III族氮化物：潜在的光子材料
DOI：
10.1117/12.865768
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
R. Katayama
中科院分区：
文献类型：
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作者：
K. Onabe;S. Sanorpim;H. Kato;M. Kakuda;T. Nakamura;K. Nakamura;S. Kuboya;R. Katayama
在合适的立方衬底上生长了c-GaN、c-GaN和c-AlGaN、c-InN和c-InGaN（富In）薄膜。这一系列的研究主要集中在α-相纯度上，这取决于相应的生长条件和所得的电学和光学性质。对于c-GaN和c-InN膜，尽管立方III族氮化物具有亚稳态性质，但仍获得了高于95%的α-相纯度。然而，对于c-AlGaN和c-InGaN膜，由于六方相通过立方{111}面上的堆垛层错而显著并入，因此α-相纯度迅速降低，立方{111}面可能暴露在粗糙化的生长或衬底表面上。结果表明，c-GaN和c-AlGaN薄膜中的电子迁移率与相纯度密切相关。
The growth and characterization of some cubic III-nitride films on suitable cubic substrates have been done, namely, c- GaN on GaAs by MOVPE, c-GaN and c-AlGaN on MgO by RF-MBE, and c-InN and c-InGaN (In-rich) on YSZ by RFMBE. This series of study has been much focused on the cubic-phase purity as dependent on the respective growth conditions and resulting electrical and optical properties. For c-GaN and c-InN films, a cubic-phase purity higher than 95% is attained in spite of the metastable nature of the cubic III-nitrides. However, for c-AlGaN and c-InGaN films, the cubic-phase purity is rapidly degraded with significant incorporation of the hexagonal phase through stacking faults on cubic {111} faces which may be exposed on the roughened growing or substrate surface. It has been shown that the electron mobilities in c-GaN and c-AlGaN films are much related to phase purity.
GaAs (001) 衬底上高光学质量 InGaPN 层的 MOVPE 生长
DOI：
--
发表时间：
2009
期刊：
影响因子：
--
作者：
D. Kaewket;S. Sanorpim;S. Tungasmita;R. Katayama;K. Onabe
通讯作者：
K. Onabe