Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces
Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces
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DOI：
10.1063/1.3368701
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发表时间：
2010-04
影响因子：
4
通讯作者：
K. Yamane;K. Hamaya;Y. Ando;Y. Enomoto;Keisuke Yamamoto;T. Sadoh;M. Miyao
中科院分区：
文献类型：
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作者：
K. Yamane;K. Hamaya;Y. Ando;Y. Enomoto;Keisuke Yamamoto;T. Sadoh;M. Miyao
我们研究了具有原子控制界面的金属/Ge接触的电学性质，并将它们与具有无序界面的金属/Ge接触进行了比较，其中原子控制界面可以通过使用Fe 3Si/Ge（111）接触来证明。我们发现Fe_3Si/n-Ge（111）接触的肖特基势垒高度出乎意料地低于其他金属/n-Ge接触的费米能级钉扎引起的势垒高度。对于Fe 3Si/p-Ge（111）接触，我们发现了明显的低温整流I-V特性，这也不同于其他金属/p-Ge接触的I-V特性，因为它们具有很强的费米能级钉扎。这些结果表明，有一个外在的贡献，如悬挂键的费米能级钉扎效应在直接连接的金属/锗接触。
We study electrical properties of metal/Ge contacts with an atomically controlled interface, and compare them with those with a disordered one, where atomically controlled interfaces can be demonstrated by using Fe3Si/Ge(111) contacts. We find that the Schottky barrier height of Fe3Si/n-Ge(111) contacts is unexpectedly lower than those induced by the strong Fermi-level pinning at other metal/n-Ge contacts. For Fe3Si/p-Ge(111) contacts, we identify clear rectifying behavior in I-V characteristics at low temperatures, which is also different from I-V features due to the strong Fermi-level pinning at other metal/p-Ge contacts. These results indicate that there is an extrinsic contribution such as dangling bonds to the Fermi-level pinning effect at the directly connected metal/Ge contacts.