High-performance self-aligned graphene transistors fabricated using contamination- and defect-free process
High-performance self-aligned graphene transistors fabricated using contamination- and defect-free process
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DOI：
10.7567/jjap.55.06gf11
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发表时间：
2016-05
影响因子：
1.5
通讯作者：
Goon-Ho Park;Kwan-Soo Kim;H. Fukidome;T. Suemitsu;T. Otsuji;W. Cho;M. Suemitsu
中科院分区：
文献类型：
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作者：
Goon-Ho Park;Kwan-Soo Kim;H. Fukidome;T. Suemitsu;T. Otsuji;W. Cho;M. Suemitsu
提出了一种无污染和无缺陷的自对准石墨烯场效应晶体管（GFET）制造工艺，该工艺使用保护性金层并通过其蚀刻。金层用作源极和漏极的电极金属。通过这种方法制造的GFET表现出优越的上级电气特性，例如8900 cm 2 V-1 s-1的本征载流子迁移率和1520 Ω µm的串联电阻，这归因于有效阻止不需要的污染和缺陷形成以及由于自对准配置而减少的访问长度。我们的方法是相当有前途的高性能GFET的器件制造方法。
A contamination- and defect-free process is proposed for self-aligned graphene field-effect transistor (GFET) fabrication using a protective gold layer and by its etching. The gold layer serves as an electrode metal for both the source and drain. GFETs fabricated by this method exhibit superior electrical characteristics, such as an intrinsic carrier mobility of 8900 cm2 V−1 s−1 and a series resistance of 1520 Ω µm, which is ascribed to the effective blocking of unwanted contamination and defect formation as well as to the reduction in access length due to the self-aligned configuration. Our approach is quite promising as a device fabrication method for high-performance GFETs.