Gallium‐rich reconstructions on GaAs(001)
Gallium‐rich reconstructions on GaAs(001)
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GaAs(001) 上的富镓重建
DOI：
10.1002/pssb.200301885
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
J. Bernholc
中科院分区：
文献类型：
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作者：
M. Pristovsek;S. Tsukamoto;A. Ohtake;N. Koguchi;B. Orr;W. Schmidt;J. Bernholc
通过对分子束外延生长的样品进行退火和掺镓处理，在GaAs(001)表面制备了富Ga重构结构，并用反射各向异性谱和反射高能电子衍射对样品进行了原位分析。在约800K以上进行退火或掺加镓都会导致(4×2)/c(8×2)的重排。降低温度或在800K以下进行退火可得到(2×6)/(3×6)重构。通过在(2×6)/(3×6)重建中加入超过0.2个单层的镓，它转变为(4×6)重建。观察到的平移对称性和测量的RAS谱与第一性原理计算的结果进行了比较。文献中提出的(2×6)结构都不是能量稳定的。用ζ(4×2)模型计算的RAS谱与(4×2)表面的测量数据吻合较好。对(2×6)个对称性的RAS谱计算表明，混合的Ga-As二聚体很可能是相应表面重构的结构元素。(2013Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Ga‐rich reconstructions on GaAs(001) surfaces were prepared by annealing and Ga dosing of Molecular Beam Epitaxy grown samples and analyzed in‐situ by Reflectance Anisotropy Spectroscopy and Reflection High‐Energy Electron Diffraction. Annealing or dosing gallium above about 800 K invariably results in a (4 × 2)/c(8 × 2) reconstruction. Lowering the temperature or annealing below 800 K results in a (2 × 6)/(3 × 6) reconstruction. By dosing the (2 × 6)/(3 × 6) reconstruction with more than 0.2 monolayer of gallium, it transforms into a (4 × 6) reconstruction. The observed translational symmetries and measured RAS spectra are compared with results of first‐principles calculations. None of the (2 × 6) structures proposed in the literature is energetically stable. The RAS spectrum calculated for the ζ(4 × 2) model resembles reasonably the data measured for the (4 × 2) surface. The RAS spectra calculated for (2 × 6) symmetries indicate that mixed Ga‐As dimers likely are a structural element of the corresponding surface reconstructions. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)