Positive-Tone Photoresist Process for Supercritical Carbon Dioxide Development
Positive-Tone Photoresist Process for Supercritical Carbon Dioxide Development
复制标题
用于超临界二氧化碳显影的正性光刻胶工艺
DOI：
10.1021/cm034343i
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发表时间：
2003
影响因子：
8.6
通讯作者：
C. Ober
中科院分区：
文献类型：
--
作者：
Victor Q. Pham;Robert J. Ferris;and Alyssandrea Hamad;C. Ober
一种新的超临界二氧化碳（scCO 2）显影，化学放大的正性光刻胶的引入聚（甲基丙烯酸四氢吡喃酯-co-1H，1H-二氢全氟辛基甲基丙烯酸酯）嵌段和无规共聚物的硅烷化后，光刻图案由248 nm的照射。高分辨率的亚微米特征是可能的与scCO 2作为显影溶剂。
A new supercritical carbon dioxide (scCO2) developable, chemically amplified positive-tone photoresist is introduced by silylation of poly(tetrahydropyranyl methacrylate-co-1H,1H-dihydroperfluorooctyl methacrylate) block and random copolymers following lithographic patterning by 248-nm irradiation. High-resolution submicrometer features are possible with scCO2 as the developing solvent.