AR AND EXCESS N INCORPORATION IN EPITAXIAL TIN FILMS GROWN BY REACTIVE BIAS SPUTTERING IN MIXED AR/N-2 AND PURE N-2 DISCHARGES
AR AND EXCESS N INCORPORATION IN EPITAXIAL TIN FILMS GROWN BY REACTIVE BIAS SPUTTERING IN MIXED AR/N-2 AND PURE N-2 DISCHARGES
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DOI:
10.1116/1.576251
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发表时间:
1989-05-01
期刊:
影响因子:
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通讯作者:
GREENE, JE
中科院分区:
文献类型:
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作者:
HULTMAN, L;SUNDGREN, JE;GREENE, JE