Current-Confinement Structure and Extremely High Current Density in Organic Light-Emitting Transistors
Current-Confinement Structure and Extremely High Current Density in Organic Light-Emitting Transistors
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DOI：
10.1002/adma.201202252
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发表时间：
2012-12-04
影响因子：
29.4
通讯作者：
Takenobu, Taishi
中科院分区：
文献类型：
--
作者：
Sawabe, Kosuke;Imakawa, Masaki;Takenobu, Taishi
通过激光蚀刻在使用电子注入缓冲层和电流限制结构的单晶双极型发光晶体管中实现极高的电流密度。此外，在高达1 kA cm（-2）的电流密度下观察到亮度线性增加，这比高电流密度下的传统有机发光二极管（OLED）的效率保持提高了三个数量级。
Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm(-2), which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.