0.25 /spl mu/m low power CMOS devices and circuits from 8 inch SOI materials
0.25 /spl mu/m low power CMOS devices and circuits from 8 inch SOI materials
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0.25 /spl mu/m 低功耗 CMOS 器件和电路，采用 8 英寸 SOI 材料
DOI：
10.1109/icsict.1995.500080
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
B. Davari
中科院分区：
文献类型：
--
作者：
B. Chen;A.S. Yapsir;S. Wu;R. Schulz;D. Yee;D. Sadana;H. Hovel;T. Ning;G. Shahidi;B. Davari
报道了来自 8 英寸 SIMOX 晶圆的 0.25 /spl mu/m SOI-CMOS 环形振荡器、各种电路和 SRAM。在完全集成的 SOI 和散装材料批次上对有功功率和待机泄漏进行了比较。 SOI 在降低有源功率方面的巨大优势在各种电路中得到了体现。人们已经系统地研究了待机泄漏路径对材料、工艺集成和器件的依赖性。讨论了减少每个待机漏电流的潜在解决方案。从这些早期的 8 英寸 SIMOX 材料中，令人鼓舞的结果表明，可以通过优化 SOI 材料制备、工艺集成和器件设计来实现低待机功耗。
0.25 /spl mu/m SOI-CMOS ring oscillators, various circuits and SRAM from 8-inch SIMOX wafers are reported. Both active power and stand-by leakage are compared on fully integrated lots for both SOI and bulk materials. The great advantage of SOI for active power reduction is demonstrated for various circuits. Stand-by leakage paths have been systematically studied on their dependence on material, process integration and devices. Potential solutions to reduce each stand-by leakage current are discussed. From these early 8-inch SIMOX materials, encouraging results suggest that low stand-by power can be achieved by optimizations of SOI material preparation, process integration and device design.