FUNDAMENTALS OF SOL-GEL DIP COATING

FUNDAMENTALS OF SOL-GEL DIP COATING
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DOI:
10.1016/0040-6090(91)90158-t
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发表时间:
1991-06-05
期刊:
影响因子:
2.1
通讯作者:
ASHLEY, CS
ASHLEY, CS
中科院分区:
材料科学3区
文献类型:
--
作者:
BRINKER, CJ;FRYE, GC;ASHLEY, CS

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在通过浸渍形成Sol-Gel薄膜的过程中,聚合物或颗粒状无机前驱体通过重力排水、同时干燥和持续缩合反应的复杂过程聚集在衬底表面。由聚合物前驱体沉积的薄膜的结构取决于前驱体的大小和结构、冷凝和蒸发的相对速度、毛细压力和衬底退出速度等因素。用聚合物硅酸盐为前驱体,薄膜的孔隙率和折射率可以改变如下:体积百分比孔隙率(0%-56%);孔半径(0-3.1 nm);比表面积(1.2-263m2g-1);折射率(1.18-1.45)。对于排斥性的单一尺寸颗粒前体,较高的包覆率促进了颗粒的有序化,表现为孔隙率从36%(随机致密堆积)降至约25%(F.C.C.或h.c.p)。
During sol-gel thin film formation via dipping, polymeric or particulate inorganic precursors are concentrated on the substrate surface by a complex process involving gravitational draining with concurrent drying and continued condensation reactions. The structure of films deposited from polymeric precursors depends on such factors as size and structure of the precursors, relative rates of condensation and evaporation, capillary pressure, and substrate withdrawal speed. Using polymeric silicate precursors, the porosity and refractive index of the deposited films may be varied as follows: volume percent porosity (0%-56%); pore radius (0-3.1 nm); surface area (1.2-263 m2 g-1); refractive index (1.18-1.45). For repulsive, monosized particulate precursors, higher coating rates promote ordering of the particles as manifested by a reduction in porosity from 36% (random dense packing) to about 25% (f.c.c. or h.c.p.).