Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors
Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors
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DOI：
10.1016/j.mssp.2021.106308
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发表时间：
2022-02
影响因子：
4.1
通讯作者：
Shuai Zhao;Guodong Yuan;Di Zhang;X. Wu;W. Han
中科院分区：
文献类型：
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作者：
Shuai Zhao;Guodong Yuan;Di Zhang;X. Wu;W. Han
金属-氧化物-半导体（MOS）界面处的严重散射，表现为载流子迁移率下降，一直是硅基场效应晶体管（FET）高性能器件领域的一个难题。在这项工作中，报告了通过工艺优化抑制界面散射的详细研究。事实证明，干氧化在构建无损伤氧化物/半导体界面方面更为有效。同时，厚的热SiO2中间层（即长的生长时间）以及长时间的后退火处理有利于界面平坦化。这种界面粗糙度散射控制与库仑和缺陷散射限制相结合，可以通过优化的 FET 工艺流程来实现。此时，所制造的 Si MOSFET 显示出更高的栅控漏极电流，并且在 1.6 K 时具有~8372 cm2V−1s−1 的峰值电子迁移率。此外，整数量子霍尔效应进一步揭示了二维电子气的受限磁输运特性。值得注意的是，我们的工作提出了一种通过散射抑制制造高迁移率 Si MOS 器件的可行集成流程，这可能会促进硅基 MOS 量子点的发展，用于潜在的固态量子计算。
The severe scattering at metal-oxide-semiconductor (MOS) interfaces, manifesting as carrier mobility declining, is always a puzzle in the field of Si-based field-effect transistors (FETs) towards high-performance devices. In this work, an elaborate study on interfacial scattering suppression through process optimization is reported. Dry oxidation is proved to be more efficient in the construction of a damage-free oxide/semiconductor interface. Meanwhile, a thick thermal-SiO2interlayer (i.e.a long growth time), together with a long-duration post-annealing treatment, is beneficial for interface planarization. Such an interface roughness scattering control, combined with Coulomb and defect scattering restrictions, can be realized with an optimized FET process flow. On this occasion, the as-fabricated Si MOSFETs show a higher gate-controlled drain current, and are with a peak electron mobility of ∼8372 cm2V−1s−1at 1.6 K. Moreover, confined magnetotransport properties of two-dimensional electron gas are further revealed by the integer quantum Hall effects. Notably, our work presents a feasible integration flow to fabricate high-mobility Si MOS devicesviascattering suppression, which may promote the evolution of Si-based MOS quantum dots for potential solid-state quantum computing.