A subthermionic tunnel field-effect transistor with an atomically thin channel
A subthermionic tunnel field-effect transistor with an atomically thin channel
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DOI：
10.1038/nature15387
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发表时间：
2015-10-01
期刊：
影响因子：
64.8
通讯作者：
Banerjee, Kaustav
中科院分区：
文献类型：
--
作者：
Sarkar, Deblina;Xie, Xuejun;Banerjee, Kaustav
信息技术的快速发展得益于硅基金属氧化物场效应晶体管的不断缩小。然而，这种技术在进一步扩展方面面临着两大挑战。首先，当沟道长度减少时，器件静电（晶体管栅极控制其沟道电位的能力）会下降，使用传统的块状材料（如硅）作为沟道。最近，二维半导体材料（1-7）已成为取代硅的有希望的候选者，因为它们即使在更短的通道长度下也能保持优异的器件静电。第二个更严峻的挑战是，由于基本的热离子限制，导通特性的陡峭度或亚阈值摆幅（8,9），电源电压不能再按晶体管尺寸的相同因素缩小。为了在没有功率损失的情况下继续缩放，需要一种不同的晶体管机制来获得亚热离子亚阈值摆动，例如带到带隧穿（10-16）。在这里，我们展示了基于二维半导体的带对带隧道场效应晶体管（隧道场效应晶体管），具有陡峭的导通特性；亚阈值摆幅最小为3.9毫伏/十年，平均为31.1毫伏/十年，在室温下40年的漏极电流。以高掺杂锗为源，原子级薄的二硫化钼为通道，构建了具有优异静电性能、无应变异质界面、低隧穿势垒、大隧穿面积的垂直异质结构。我们的原子薄层半导体通道隧道场效应管（ATLAS-TFET）是唯一一种平面结构的隧道场效应管，可以在40年的漏极电流下实现亚热离子亚阈值摆幅，参考文献17，也是唯一一种在0.1伏的低电源电压下实现这一目标的隧道场效应管（任何结构）。我们的器件是目前最薄的通道亚热离子晶体管，并且有潜力为超密度和低功耗集成电路以及超灵敏的生物传感器和气体传感器开辟新的途径。
The fast growth of information technology has been sustained by continuous scaling down of the silicon-based metal-oxide field-effect transistor. However, such technology faces two major challenges to further scaling. First, the device electrostatics (the ability of the transistor's gate electrode to control its channel potential) are degraded when the channel length is decreased, using conventional bulk materials such as silicon as the channel. Recently, two-dimensional semiconducting materials(1-7) have emerged as promising candidates to replace silicon, as they can maintain excellent device electrostatics even at much reduced channel lengths. The second, more severe, challenge is that the supply voltage can no longer be scaled down by the same factor as the transistor dimensions because of the fundamental thermionic limitation of the steepness of turn-on characteristics, or subthreshold swing(8,9). To enable scaling to continue without a power penalty, a different transistor mechanism is required to obtain subthermionic subthreshold swing, such as band-to-band tunnelling(10-16). Here we demonstrate band-to-band tunnel field-effect transistors (tunnelFETs), based on a two-dimensional semiconductor, that exhibit steep turn-on; subthreshold swing is a minimum of 3.9 millivolts per decade and an average of 31.1 millivolts per decade for four decades of drain current at room temperature. By using highly doped germanium as the source and atomically thin molybdenum disulfide as the channel, a vertical heterostructure is built with excellent electrostatics, a strain-free heterointerface, a lowtunnelling barrier, and a large tunnelling area. Our atomically thin and layered semiconducting-channel tunnel-FET(ATLAS-TFET) is the only planar architecture tunnel-FET to achieve subthermionic subthreshold swing over four decades of drain current, as recommended in ref. 17, and is also the only tunnel-FET(inany architecture) to achieve this at a low power-supply voltage of 0.1 volts. Our device is at present the thinnest-channel subthermionic transistor, and has the potential to open up new avenues for ultra-dense and low-power integrated circuits, as well as for ultra-sensitive biosensors and gas sensors(18-21).