Anamalous-scattering contrast study of the mixed-valence charge-density-wave conductor NbSe3
Anamalous-scattering contrast study of the mixed-valence charge-density-wave conductor NbSe3
复制标题
混合价电荷密度波导体NbSe3的反常散射对比研究
DOI:
10.1107/s0108767392011279
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发表时间:
1993
期刊:
影响因子:
--
通讯作者:
P. Coppens
中科院分区:
文献类型:
--
作者:
Yan Gao;M. Pressprich;P. Coppens
The valence-contrast diffraction method is used at the Nb K edge in the analysis of the mixed-valence solid NbSe3. The NbSe3 structure consists of three parallel chains of prismatically coordinated Nb atoms and undergoes two low-temperature Peierls-type phase transitions that lead to modulated structures. Previous analysis of synchrotron-radiation single-crystal data has shown that the transition that occurs on cooling at 145 K (leading to the q1-type modulation) involves displacements of NbIII atoms as well as of some of the coordinated Se atoms, while the second transition (the q2-type modulation), at 59 K, involves displacements of NbI atoms and an Se atom of column II [van Smaalen, de Boer, Meetsma, Graafsma, Sheu, Darovskikh, Coppens & Levy (1992). Phys. Rev. B, 45, 3103–3106]. The present room-temperature study, performed at seven different wavelengths in the vicinity of the Nb absorption edge, shows the NbII-atom edge to be shifted to higher energies by about 5 eV relative to those of the other Nb atoms. This indicates a smaller population of the NbII-atom conduction band, in agreement with band structure calculations but not with conclusions derived from nuclear magnetic resonance measurements.