On-Chip High-Voltage Charge Pump With MEMS Post-Processed Standard 5-V CMOS on SOI for Electroosmotic Flow Micropumps
On-Chip High-Voltage Charge Pump With MEMS Post-Processed Standard 5-V CMOS on SOI for Electroosmotic Flow Micropumps
复制标题
用于电渗流微型泵的片上高压电荷泵，采用 SOI 上 MEMS 后处理标准 5V CMOS
DOI：
10.1109/led.2018.2829925
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发表时间：
2018
影响因子：
4.9
通讯作者：
Mita Yoshio
中科院分区：
文献类型：
--
作者：
Okamoto Yuki;Takehara Hiroaki;Fujimoto Koji;Ichiki Takanori;Ohba Takayuki;Mita Yoshio
一种新型的片上集成高压（HV）发生器实现了我们独特的MEMS后处理方法与标准的CMOS工艺上的绝缘体上硅（SOI）。采用深反应离子蚀刻和各向同性蚀刻隔离SOI上具有标准5 V晶体管的铸造制造的电荷泵元件。该方法有助于成功操作的HV-需要MEMS器件，其标称工作电压大于50 V，并通过使用硅器件，电渗流微泵的驱动进行了演示。测得的输出与泵级的数量成比例，并且在20级的情况下观察到为95.2V。后处理的SOI上CMOS可以承受高达800 V的电压，并且可以使用该技术驱动具有非常高电压的各种MEMS。
A novel on-chip integrated high-voltage (HV) generator is realized by our unique MEMS post-processing method with the standard CMOS process on a silicon-on-insulator (SOI). Foundry-made charge-pump elements with standard 5-V transistors on an SOI are isolated with deep reactive ion etching and isotropic etching. This method facilitated the successful operation of a HV-requiring MEMS device, the nominal working voltage of which is greater than 50 V, and by using the silicon device, the driving of an electroosmotic flow micropump was demonstrated. The measured output was proportional to the number of pump stages, and it was observed as 95.2 V with 20 stages. The post-processed CMOS-on-SOI can sustain voltages up to 800 V, and various MEMS with very high voltages can be driven using this technology.