Enhanced Adhesion Strength between Silicon Substrate and Metal Film by Surface Fluorination
Enhanced Adhesion Strength between Silicon Substrate and Metal Film by Surface Fluorination
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DOI：
10.1246/cl.170739
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发表时间：
2017-08
影响因子：
1.6
通讯作者：
Fumihiro Nishimura;Jae-Ho Kim;S. Yonezawa
中科院分区：
文献类型：
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作者：
Fumihiro Nishimura;Jae-Ho Kim;S. Yonezawa
硅片表面用F2气体在25℃下处理10-120分钟。经120min氟化处理的硅表面粗糙度(Ra)是未处理硅的7倍(3.2 nm)。此外，氟化硅的水接触角降低到7°。表面氟化可以提高沉积在硅衬底上的金属镍的结合强度，这是由于硅衬底表面的粗糙度和亲水性增加所致。
The surface of silicon wafer was treated with F2 gas at 25 °C for 10–120 min. The surface roughness (Ra) of silicon fluorinated for 120 min was 7 times larger than that (3.2 nm) of untreated silicon. Also, the water contact angle of fluorinated silicon decreased to 7°. The adhesion strength of Ni metal deposited on the silicon substrate could be enhanced by surface fluorination due to increased roughness and hydrophilic surface of the silicon substrate.