Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film
Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film
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通过粗糙的Ag岛膜提高SiNx发光器件的光提取效率
DOI：
10.1063/1.3678632
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发表时间：
2012-01-16
影响因子：
4
通讯作者：
Que, Duanlin
中科院分区：
文献类型：
--
作者：
Wang, Feng;Li, Dongsheng;Que, Duanlin
基于ITO/Ag/SiNx/p+-Si/Al结构，器件的外量子效率较无Ag岛膜的器件有显著提高。分析表明，ITO电极表面粗糙化所导致的光提取效率的提高是这种提高的主要原因。自发辐射率和载流子注入能级的提高对内量子效率的提高也有指导意义。我们的研究结果表明，局域表面等离子体增强的氮化硅基发光器件显示了巨大的潜力，为发展效率的硅基光学器件。
Based on an ITO/Ag/SiNx/p+-Si/Al structure, a significant enhancement of the external quantum efficiency was achieved compared with the device without Ag island film. Analysis showed that the increase of the light-extraction efficiency resulted from the surface roughening of ITO electrode has a main contribution to this enhancement. The increase of the internal quantum efficiency induced by the enhancement of spontaneous emission rate and the carrier injection level also has an instructive contribution. Our results demonstrate that localized surface plasmons enhanced SiNx-based light emitting devices show great promise for the development of efficiency Si-based optical device.