Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature
Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature
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DOI：
10.1038/s41563-020-0619-6
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发表时间：
2020-02-24
期刊：
影响因子：
41.2
通讯作者：
Dyakonov, Vladimir
中科院分区：
文献类型：
--
作者：
Gottscholl, Andreas;Kianinia, Mehran;Dyakonov, Vladimir
宽禁带半导体中的光学可寻址自旋是探索量子现象的一个很有前途的平台。虽然对金刚石和碳化硅等三维晶体中的色心进行了详细的研究，但在二维材料中却没有实验观察到。在这里，我们报道了二维材料六方氮化硼（hBN）的自旋依赖过程。我们确定了与特定缺陷相关的荧光线，带负电荷的硼空位（vb -基态和3.5 GHz的零场分裂）。我们建立了该中心在室温下表现出光学检测的磁共振，并证明了它在光泵浦光诱导下的自旋极化，这导致了自旋基态的光诱导居群反转——这是相干自旋操纵方案的先决条件。我们的研究结果在建立2D hBN作为可扩展量子技术的主要平台方面迈出了一步，具有基于自旋的量子信息和传感应用的潜力。
Optically addressable spins in wide-bandgap semiconductors are a promising platform for exploring quantum phenomena. While colour centres in three-dimensional crystals such as diamond and silicon carbide were studied in detail, they were not observed experimentally in two-dimensional (2D) materials. Here, we report spin-dependent processes in the 2D material hexagonal boron nitride (hBN). We identify fluorescence lines associated with a particular defect, the negatively charged boron vacancy (VB-ground state and zero-field splitting of 3.5 GHz. We establish that this centre exhibits optically detected magnetic resonance at room temperature and demonstrate its spin polarization under optical pumping, which leads to optically induced population inversion of the spin ground state-a prerequisite for coherent spin-manipulation schemes. Our results constitute a step forward in establishing 2D hBN as a prime platform for scalable quantum technologies, with potential for spin-based quantum information and sensing applications.