Some general properties of the density of states in the coherent potential approximation

Some general properties of the density of states in the coherent potential approximation
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相干势近似中态密度的一些一般性质

DOI:
10.1088/0022-3719/8/20/008
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发表时间:
1975
期刊:
Journal of Physics C: Solid State Physics
影响因子:
--
通讯作者:
F. Ducastelle
F. Ducastelle
中科院分区:
--
文献类型:
--
作者:
F. Ducastelle

文献摘要

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导出了相干势近似下态密度的一些一般性质。基本结果是积分态密度的一般显式公式。特别注意这个公式的变分性质及其直接后果。然后,它被应用到证明相当普遍的总和规则的子带中所包含的n-组分合金的状态数。最后讨论了带边的位置。这些带边被证明实际上是在无序系统的允许范围内。
Some general properties of the density of states in the coherent potential approximation are derived. The basic result is a general explicit formula for the integrated density of states. Particular attention is paid to the variational properties of this formula and to its direct consequences. It is then applied to prove quite generally the sum rule for the number of states contained in the sub-bands of an n-component alloy. Finally, a discussion of the position of the band-edges is given. These band-edges are proved to be actually within the allowed bounds for disordered systems.