Characterization of the Mixing Performance of All-NbN Superconducting Tunnel Junctions at 0.5 THz
Characterization of the Mixing Performance of All-NbN Superconducting Tunnel Junctions at 0.5 THz
复制标题
DOI：
10.1109/tasc.2009.2018504
复制
发表时间：
2009-06
影响因子：
1.8
通讯作者：
Jing Li;M. Takeda;Zhen Wang;S. Shi
中科院分区：
文献类型：
--
作者：
Jing Li;M. Takeda;Zhen Wang;S. Shi
具有1.4 THz的间隙频率，全NbN超导体-绝缘体-超导体（SIS）结可能适用于THz天文学和大气研究的灵敏外差混频器。在本文中，我们报告的设计，制造和性能表征的0.5太赫兹波导SIS混频器采用双NbN/AlN/NbN结和NbN/MgO/NbN调谐电路，没有阻抗变换器。测量了两种不同调谐电感的NbN SIS结的噪声性能，并与考虑和不考虑多次Andreev反射（MAR）效应的模拟结果进行了比较，还与视频检测响应进行了比较。此外，中频输出功率的稳定性和老化的影响，制造的NbN SIS结进行了研究。
With a gap frequency of 1.4 THz, all-NbN Superconductor-Insulator-Superconductor (SIS) junctions are potentially applicable to sensitive heterodyne mixers for THz astronomy and atmospheric research. In this paper, we report the design, fabrication, and performance characterization of a 0.5-THz waveguide SIS mixer incorporating twin NbN/AlN/NbN junctions and an NbN/MgO/NbN tuning circuit with no impedance transformers. The noise performance of two NbN SIS junctions with different tuning inductances is measured, compared with the simulated results without and with the multiple Andreev reflection (MAR) effect taken into account, and also compared with the video detection response. In addition, the IF-output-power stability and aging effect of fabricated NbN SIS junctions are investigated.