Sputter Type HF Ion Source for Ion Beam Deposition Apparatus
Sputter Type HF Ion Source for Ion Beam Deposition Apparatus
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离子束沉积装置用溅射型高频离子源
DOI：
10.1143/jjap.26.721
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发表时间：
1987
影响因子：
1.5
通讯作者：
M. Yamashita
中科院分区：
文献类型：
--
作者：
M. Yamashita
研制了一种双腔式高频离子源。将L耦合高频放电现象与直流二极管溅射相结合，以提高等离子体密度。在300 W的高频功率下，由于等离子体几乎可以被限制在靶、高频线圈和离子引出孔电极的有限空间内，因此可以有效地产生3×1012 ions/cm ~ 3的高密度等离子体。然后，大多数固体源材料在电离区域中通过高速率溅射（对于Cu靶为400 μ m/s）有效地蒸发，并且同时被高度电离。引出离子束的剩余能量和能量扩展ΔE分别为13.5 eV和7.8 eV。在Ar溅射气压为1×10-1 Torr（1.33×101 Pa）、HF功率为300 W、引出电压为10 kV的条件下，质量分离Cu+电流的最大离子电流为530 µA。
A sputter-type HF(high-frequency) ion source was developed. The L-coupled high-frequency discharge phenomenon was combined with DC diode sputtering to enhance the plasma density. A high-density plasma of 3×1012 ions/cm3 was effectively generated at an HF power of 300W, since the plasma could almost be confined in the limited space of a target, an HF coil and an ion extraction aperture electrode. Then, most of the solid source materials were effectively vaporized by high-rate sputtering (400 Å/s for Cu target) in the ionization region and were simultaneously highly ionized. The excess energy and the energy spread ΔE of the extracted ion beam were 13.5 eV and 7.8 eV, respectively. The maximum ion current of the mass separated Cu+ current was 530 µA without deceleration, under the conditions of an Ar sputter gas pressure of 1×10-1 Torr (1.33×101 Pa), HF power of 300W, and an extraction voltage of 10 kV, respectively.