Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures
Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures
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DOI：
10.1109/tpel.2023.3265864
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发表时间：
2023-07
影响因子：
6.7
通讯作者：
Jiaxing Wei;Zhaoxiang Wei;Haochun Fu;Junhou Cao;Tuanzhuang Wu;Jiameng Sun;Xudong Zhu;Sheng Li;Long Zhang;Siyang Liu;Weifeng Sun
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文献类型：
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作者：
Jiaxing Wei;Zhaoxiang Wei;Haochun Fu;Junhou Cao;Tuanzhuang Wu;Jiameng Sun;Xudong Zhu;Sheng Li;Long Zhang;Siyang Liu;Weifeng Sun
为了弄清碳化硅功率金属氧化物半导体场效应晶体管(MOSFET)的研究现状，加深对MOSFET可靠性的认识，比较了平面栅(PG)和槽栅(TG)功率MOSFET的可靠性机理。综述了商用碳化硅MOSFET产品可靠性问题的最新研究成果，包括PG器件、双沟槽器件和非对称TG器件。由于栅沟槽的存在及其独特的保护结构，SiCTG MOSFET在各种极限和长期电热应力下表现出与PG MOSFET截然不同的失稳现象。详细讨论和评述了与实际工作条件密切相关的雪崩应力、短路应力、体二极管浪涌电流应力和开关应力等应力对碳化硅功率MOSFET的影响。
To clarify the current research situation and offer a better understanding of the reliability for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfets), a comparison among the reliability mechanisms between planar-gate (PG) and trench-gate (TG) SiC power mosfets, which have not been comprehensively summarized, is made in this article. The latest studies focusing on the reliability issues of commercial SiC mosfet products, including the PG device, the double-trench device and the asymmetric TG device, are reviewed. For the existing of the gate trenches and the unique structures protecting them, SiC TG mosfets express quite different instability phenomena from the PG ones under various ultimate and long-term electro-thermal stresses. The influences of these stresses closely related to the practical operation conditions on SiC power mosfets, including the avalanche stress, the short-circuitstress, the surge current stress of the body diode, and the switching stress, are discussed and reviewed in details.