Hard-soldered InGaAsP single-emitter diode lasers on CTE-matched heatsinks deliver record power
Hard-soldered InGaAsP single-emitter diode lasers on CTE-matched heatsinks deliver record power
复制标题
硬焊接 InGaAsP 单发射二极管激光器位于 CTE 匹配的散热器上，可提供创纪录的功率
DOI：
10.1109/leos.2008.4688911
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
S. Patterson
中科院分区：
文献类型：
--
作者：
P. Leisher;D. Wise;K. Price;W. Dong;M. Grimshaw;S. Patterson
稀土掺杂固体激光器和光纤激光器的直接泵浦等应用推动了工作在1400 nm至2000 nm波段的更高功率商用二极管激光器的发展。在这项工作中，我们报告了高功率硬焊ingaasp基单发射极二极管激光器的最新进展。在25℃条件下，工作波长为1470 nm、1700 nm和1940 nm的激光器的峰值连续波功率分别为4 W、2.3 W和1.4 W。在1700 -nm的准连续波（QCW）功率超过>0w（峰值），来自单个150 -mum条纹发射器和>150W（峰值）的16发射极阵列配置。
Applications such as direct pumping of rare-earth doped solid state and fiber lasers are driving development of higher power commercial diode lasers operating in the 1400 -nm to 2000 -nm band. In this work, we report on recent progress in high-power hard-soldered InGaAsP-based single emitter diode lasers. Peak continuous wave (CW) powers of 4 W, 2.3 W, and 1.4 W are measured at 25 degC for lasers operating at 1470 nm, 1700 nm, and 1940 nm, respectively. Quasi-continuous wave (QCW) power at 1700 -nm in excess of >10 W (peak) is reported from a single 150 -mum stripe emitter and >150W (peak) in a 16 emitter array configuration.