Microwave Low-Noise Performance of $0.17~\mu \text{m}$ Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Microwave Low-Noise Performance of $0.17~\mu \text{m}$ Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
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DOI：
10.1109/led.2016.2612624
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发表时间：
2016-09
影响因子：
4.9
通讯作者：
H. Yoon;B. Min;Jong min Lee;D. Kang;H. Ahn;Hae-cheon Kim;Jong-Won Lim
中科院分区：
文献类型：
--
作者：
H. Yoon;B. Min;Jong min Lee;D. Kang;H. Ahn;Hae-cheon Kim;Jong-Won Lim
具有宽头双层 T 形栅极的 SiC 衬底上的微波低噪声性能 AlGaN/GaN HEMT 已被报道。栅长（Lg）为0.17 μm、源漏间距（Lsd）为3.5 μm的HEMT表现出最大外在跨导为360 mS/mm、电流增益截止频率（fT）为50 GHz、最大振荡频率（fmax）为149 GHz、三端击穿电压为113 V。该器件的最小噪声系数（NFmin）为当偏压为 Vds = 5 V 和 Ids = 140 mA/mm 时，在 10 和 18 GHz 下分别为 0.50 和 0.84 dB，这是迄今为止栅极长度大于 0.1 μm 的 GaN 基 T 形栅极 HEMT 的最低噪声特性。这种优异的噪声性能归功于宽头T形栅极带来的栅极电阻的降低和器件特性的改善。
Microwave low-noise performance AlGaN/GaN HEMT on a SiC substrate with a wide head double-deck T-shaped gate has been reported. The HEMTs with gatelength (Lg) of 0.17 μm and source-drain spacing (Lsd) of 3.5 μm exhibited a maximum extrinsic transconductance of 360 mS/mm, a current gain cutoff frequency (fT) of 50 GHz, a maximum oscillation frequency (fmax) of 149 GHz, and three-terminal breakdown voltage of 113 V. The device exhibited a minimum noise figure (NFmin) of 0.50 and 0.84 dB at 10 and 18 GHz, respectively, when biased at Vds = 5 V and Ids = 140 mA/mm, which is the lowest noise characteristics ever reported for the GaN-based T-shaped gate HEMTs with gate length larger than 0.1 μm. This excellent noise performance is attributed to the reduction of the gate resistance resulting from a wide head T-shaped gate and the improved device characteristics.