Considerations for DD Simulation at Cryogenic Temperature
Considerations for DD Simulation at Cryogenic Temperature
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低温下 DD 模拟的注意事项
DOI：
10.1109/sispad54002.2021.9592572
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
D. Kim
中科院分区：
文献类型：
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作者：
Seonghoon Jin;A. Pham;W. Choi;M. A. Pourghaderi;U. Kwon;D. Kim
我们讨论深低温下 MOSFET 晶体管漂移扩散模拟中采用的器件模型。我们报告了常用模型（飞利浦统一迁移率模型、高场饱和模型、不完全电离模型和量子化模型）在低温下的潜在问题以及如何解决这些问题。此外，我们提出了一个带尾模型来捕获低温下的亚阈值斜率饱和度。我们还讨论了如何获得初始解并执行偏差斜坡以避免收敛问题。作为一个应用，我们研究了低至 4 K 的环栅晶体管的温度相关操作。
We discuss device models employed in the drift-diffusion simulation of MOSFET transistors at deep cryogenic temperatures. We report potential issues of the commonly used models (the Philips unified mobility model, the high field saturation model, the incomplete ionization model, and the quantization model) at low temperatures and how to resolve the issues. In addition, we present a band tail model to capture the subthreshold slope saturation at low temperatures. We also discuss how to obtain the initial solution and perform the bias ramping to avoid convergence issues. As an application, we study the temperature-dependent operation of a gate-all-around transistor down to 4 K.