N,N′-Dihydrotetraazapentacenes (DHTA) in thin film transistors
N,N′-Dihydrotetraazapentacenes (DHTA) in thin film transistors
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DOI：
10.1039/c4tc02426e
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发表时间：
2015-02
影响因子：
6.4
通讯作者：
F. Paulus;B. Lindner;Hilmar Reiss;F. Rominger;A. Leineweber;Y. Vaynzof;H. Sirringhaus;U. Bunz
中科院分区：
文献类型：
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作者：
F. Paulus;B. Lindner;Hilmar Reiss;F. Rominger;A. Leineweber;Y. Vaynzof;H. Sirringhaus;U. Bunz
报道了三种N，N′-二氢四氮杂并五苯（DHTA）的合成和结构性质。二氢四氮杂并五苯体的不同取代方式（H、F、Cl）对衍生物的光学、电学和形貌性质有显著影响。研究了合成材料作为顶栅/底接触（BC/TG）晶体管中的有源层。二氯化衍生物的晶体管性能几乎与加工条件无关，平均空穴迁移率为1.04 cm 2 V-1 s-1，最佳迁移率值为0.07 - 0.11 cm 2 V-1 s-1。三种衍生物中的每一种都被发现在溶液生长的晶体中表现出单独的包装基序，通过单晶X射线分析确定。令人惊讶的是，对于所有三种材料，在旋转浇铸膜中形成不同的多晶型物，解释了观察到的形态和FET性能。
The synthesis and structural properties of three N,N′-dihydrotetraazapentacenes (DHTA) are described. The different substitution pattern (H, F, Cl) of the dihydrotetraazapentacene body exhibited a significant effect on the optical, electronic and morphological properties of the derivatives in thin films. The synthesised materials were investigated as active layers in top gate/bottom contact (BC/TG) transistors. The transistor performance of the dichlorinated derivative was almost independent on the processing conditions with an average hole mobility of ∼0.04 cm2 V−1 s−1 and best mobility values ranging from 0.07 to 0.11 cm2 V−1 s−1. Each of the three derivatives was found to exhibit an individual packing motif in solution grown crystals, determined by single crystal X-ray analysis. Surprisingly, for all three materials a different polymorph formed in spin cast films explaining the observed morphology and FET performance.