Growth phases of ZnTe on GaSb(100).
Growth phases of ZnTe on GaSb(100).
复制标题
GaSb(100) 上 ZnTe 的生长相。
DOI：
--
复制
发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Chiang
中科院分区：
文献类型：
--
作者：
Franklin;Miller;Chiang
利用同步辐射光电子技术研究了GaSb(100)上ZnTe的高温和低温生长相。解卷积的核心级线形状用于构建这两种化合物半导体之间的界面的结构模型。此外，价带和费米能级的移动用于检查低温相的异质结带偏移和高温相的掺杂剂掺入。
Synchrotron-radiation photoemission was used to study the high- and low-temperature growth phases of ZnTe on GaSb(100). The deconvoluted core-level line shapes were used to construct structural models for the interface between these two compound semiconductors. In addition, the movement of the valence band and Fermi level was used to examine the heterojunction band offset for the low-temperature phase and the dopant incorporation for the high-temperature phase.