Point-contacting by localised dielectric breakdown: Characterisation of a metallisation technique for the rear surface of a solar cell
Point-contacting by localised dielectric breakdown: Characterisation of a metallisation technique for the rear surface of a solar cell
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局部介电击穿的点接触：太阳能电池背面金属化技术的表征
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
S. Bremner
中科院分区：
文献类型：
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作者：
N. Western;I. Perez;S. Wenham;S. Bremner
表征结果呈现为欧姆接触钝化晶体硅，形成使用点接触局部介电击穿技术。通过本征a-Si：H钝化层在金属和重掺杂表面区域之间形成自对准接触。局部掺杂由激光器使用与选择性发射极形成相同的标准技术提供。我们的结果为栅极金属的Au，Al和Ti表明，该技术不依赖于电介质和金属之间的反应性，从接触过程中排除金属诱导结晶。在透射电子显微镜图像中观察到栅极金属扩散到电介质中，表明在击穿过程中局部存在高温。该技术同样适用于n型硅和p型硅的接触，使其成为硅与钝化后表面欧姆接触的潜在替代方案。
Characterisation results are presented for ohmic contacts to passivated crystalline silicon, formed using the point-contacting by localised dielectric breakdown technique. Self aligned contact is made between the metal and heavily doped surface regions through an intrinsic a-Si:H passivation layer. Local doping is provided by a laser using a standard technique identical to that for selective emitter formation. Our results for gate metals of Au, Al, and Ti show that the technique does not rely on reactivity between the dielectric and the metal, excluding metal induced crystallisation from the contacting process. Diffusion of the gate metal into the dielectric is observed in transmission electron microscope images suggesting high temperatures are present locally during the breakdown process. The technique is equally applicable to contacting of n and p-type silicon, making it a potential alternative for ohmic contacting to silicon to passivated rear surfaces.