Eigenanalysis of morphological diversity in silicon random nanostructures formed via resist collapse
Eigenanalysis of morphological diversity in silicon random nanostructures formed via resist collapse
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DOI：
10.1016/j.physa.2016.06.140
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发表时间：
2016-11-15
影响因子：
3.3
通讯作者：
Matsumoto, Tsutomu
中科院分区：
文献类型：
--
作者：
Naruse, Makoto;Hoga, Morihisa;Matsumoto, Tsutomu
纳米人工制品度量是一种信息安全原理和技术，它利用在纳米尺度上发生的物理上不可控的过程来防止日益增加的安全威胁。源于抗蚀剂塌陷的平面硅器件表面上形成的多功能形态图案是用于纳米伪影度量的最独特和最有用的车辆之一。在这项研究中，我们展示了实验制造的硅随机纳米结构的本征分析，通过它的多样性和潜在的能力的身份进行定量表征。我们的eigenspacebased方法提供了直观的物理图片和定量讨论的形态多样性的纳米结构的设备，同时统一的测量稳定性，这是最重要的问题之一，关于安全应用。分析表明，每0.18 μ m（2）纳米结构面积约有10（115）种可能的身份，这表明纳米级多功能形态的有用性。本征分析方法具有广泛适用于其他材料，设备和系统架构的潜力。(C)2016爱思唯尔B.V.保留所有权利。
Nano-artifact metrics is an information security principle and technology that exploits physically uncontrollable processes occurring at the nanometer-scale to protect against increasing security threats. Versatile morphological patterns formed on the surfaces of planar silicon devices originating from resist collapse are one of the most unique and useful vehicles for nano-artifact metrics. In this study, we demonstrate the eigenanalysis of experimentally fabricated silicon random nanostructures, through which the diversity and the potential capacity of identities are quantitatively characterized. Our eigenspacebased approach provides intuitive physical pictures and quantitative discussions regarding the morphological diversity of nanostructured devices while unifying measurement stability, which is one of the most important concerns regarding security applications. The analysis suggests approximately 10(115) possible identities per 0.18-mu m(2) nanostructure area, indicating the usefulness of nanoscale versatile morphology. The presented eigenanalysis approach has the potential to be widely applicable to other materials, devices, and system architectures. (C) 2016 Elsevier B.V. All rights reserved.