Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions
Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions
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DOI：
10.1063/5.0094708
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发表时间：
2022-06
影响因子：
4
通讯作者：
Y. Hotta;R. Nemoto;Keisuke Muranushi;Yujun Zhang;H. Wadati;Keita Muraoka;Hiroshi Sakanaga;H. Yoshida;K. Arafune;H. Tabata
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文献类型：
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作者：
Y. Hotta;R. Nemoto;Keisuke Muranushi;Yujun Zhang;H. Wadati;Keita Muraoka;Hiroshi Sakanaga;H. Yoshida;K. Arafune;H. Tabata
研究了La 1 − xSrxVO 3/p-Si（100）结构中强关联电子系统/能带半导体结的界面特性。光谱观测表明，当x ≤ 0.2时，界面的电子结构为典型的绝缘体/半导体结，当x ≥ 0.25时，界面的电子结构为典型的肖特基结。对于正向电流密度-偏置电压（J-V）特性，根据J-V特性的电子发射模型拟合，估计了光谱学无法解释的能垒，表明从Si注入La 1 − xSrxVO 3的载流子也可以感受到界面处库仑排斥的相关力。
The interface properties of strongly correlated electron system/band semiconductor junctions were investigated in the La1−xSrxVO3/p-Si(100) structure. Spectroscopic observations show that the electronic structure of the interface is typical of insulator/semiconductor junctions for x ≤ 0.2 and Schottky junctions for x ≥ 0.25. For the forward current density–bias voltage (J–V) characteristics, energy barriers that were otherwise unexplainable by spectroscopy were estimated from the thermionic emission model fitting of the J–V characteristics, indicating that the injected carriers from Si to La1−xSrxVO3 can also feel the correlation force of Coulomb repulsion at the interface.