Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers -: art. no. 241104
Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers -: art. no. 241104
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DOI：
10.1063/1.2140875
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发表时间：
2005-12-12
影响因子：
4
通讯作者：
Amann, MC
中科院分区：
文献类型：
--
作者：
Grau, M;Lin, C;Amann, MC
介绍了五元系AlGaInAsSb作为GaSb基Ⅰ型激光二极管的新型阻挡层材料。对于超过3 μ m的波长，这种材料与标准GaInAsSb/AlGaAsSb结构相比，改善了GaInAsSb量子威尔斯和势垒之间的价带偏移。由三个压应变GaInAsSb量子威尔斯阱和AlGaInAsSb势垒及波导组成的激光器结构具有良好的结构和光学质量。3.26利用工作在高达50 ℃的脉冲操作中的脊波导激光器已经实现了μ m发射。利用该发射波长，可获得CH 4的强吸收线用于气体吸收测量。
Quinternary AlGaInAsSb is introduced as a new barrier material for GaSb-based type-I laser diodes. For wavelengths beyond 3 mu m, this material improves the valence-band offset between GaInAsSb quantum wells and barriers as compared to standard GaInAsSb/AlGaAsSb structures. The laser structures, which comprise three compressively strained GaInAsSb quantum wells and AlGaInAsSb barriers and waveguides, show good structural and optical quality. 3.26 mu m emission has been achieved with ridge waveguide lasers working in pulsed operation up to 50 degrees C. With this emission wavelength, a strong absorption line of CH4 is accessible for gas absorption measurements.