Solid-phase crystallization of β-FeSi2 thin film in Fe/Si structure
Solid-phase crystallization of β-FeSi2 thin film in Fe/Si structure
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DOI：
10.1016/j.tsf.2004.02.065
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发表时间：
2004-08-02
期刊：
影响因子：
2.1
通讯作者：
Miyao, M
中科院分区：
文献类型：
--
作者：
Murakami, Y;Kenjo, A;Miyao, M
利用a-Fe（厚度：20 nm）/c-Si（100）、（110）和（111）堆叠结构研究了β-FeSi2薄膜的固相生长对Si衬底晶体取向的依赖性。 X射线衍射(XRD)测量表明β-FeSi2的形成速率对基底取向的依赖性如下：(100)>(111)>(110)。这种依赖性可以根据β-FeSi2和Si衬底之间的晶格失配来解释，即β-FeSi2(100)和Si(100)、β-FeSi2(110)或(101)和Si(111)以及β-FeSi2(010)或(001)和Si(110)之间的晶格失配为1.4-2.0%， 分别为 5.3-5.5% 和 9.2%。对于非常薄的薄膜，固相生长的基底取向依赖性变得相对显着。 (C) 2004 Elsevier B.V. 保留所有权利。
Dependence of solid-phase growth of beta-FeSi2 thin films on the crystal orientation of Si substrates has been investigated by using a-Fe (thickness: 20 nm)/c-Si(100), (110) and (111) stacked structures. X-ray diffraction (XRD) measurements suggested that the substrate orientation dependence of the formation rate of beta-FeSi2 was as follows: (100)>(111)>(110). This dependence can be explained on the basis of the lattice mismatch between beta-FeSi2 and Si substrates, i.e., the lattice mismatch between beta-FeSi2(100) and Si(100), beta-FeSi2(110) or (101) and Si(111), and beta-FeSi2(010) or(001) and Si(110) of 1.4-2.0%, 5.3-5.5% and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films. (C) 2004 Elsevier B.V. All rights reserved.