Stability of organic permeable base transistors
Stability of organic permeable base transistors
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DOI：
10.1063/1.5125233
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发表时间：
2019-11
影响因子：
4
通讯作者：
K. N. Subedi;Akram Al-Shadeedi;B. Lüssem
中科院分区：
文献类型：
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作者：
K. N. Subedi;Akram Al-Shadeedi;B. Lüssem
有机可渗透基区晶体管(OPBT)具有很高的传输频率和很大的导通电流。然而，对于该技术后来的商业应用来说，高操作稳定性也是必不可少的。在这里，讨论了OPBTS在连续循环和基极偏压应力过程中的稳定性。观察到，如果通过对基极施加恒定电位较长时间来施加压力，这些晶体管的阈值电压向更正的基极电压移动。在2D器件模拟的帮助下，提出了观察到的不稳定性是由于基极周围形成的氧化层上捕获的电荷所致。这些电荷在去除应力后被热释放，大约24-48小时后器件达到其初始性能。有机可渗透基区晶体管(OPBT)具有非常高的渡越频率和大的导通电流。然而，对于该技术后来的商业应用来说，高操作稳定性也是必不可少的。在这里，讨论了OPBTS在连续循环和基极偏压应力过程中的稳定性。观察到，如果通过对基极施加恒定电位较长时间来施加压力，这些晶体管的阈值电压向更正的基极电压移动。在2D器件模拟的帮助下，提出了观察到的不稳定性是由于基极周围形成的氧化层上捕获的电荷所致。这些电荷在消除应力后被热释放，大约24-48小时后装置达到其初始性能。
Organic Permeable Base Transistors (OPBTs) reach a very high transit frequency and large on-state currents. However, for a later commercial application of this technology, a high operational stability is essential as well. Here, the stability of OPBTs during continuous cycling and during base bias stress is discussed. It is observed that the threshold voltage of these transistors shifts toward more positive base voltages if stressed by applying a constant potential to the base electrode for prolonged times. With the help of a 2D device simulation, it is proposed that the observed instabilities are due to charges that are trapped on top of an oxide layer formed around the base electrode. These charges are thermally released after removing the stress, and the device reaches its initial performance after around 24–48 h.Organic Permeable Base Transistors (OPBTs) reach a very high transit frequency and large on-state currents. However, for a later commercial application of this technology, a high operational stability is essential as well. Here, the stability of OPBTs during continuous cycling and during base bias stress is discussed. It is observed that the threshold voltage of these transistors shifts toward more positive base voltages if stressed by applying a constant potential to the base electrode for prolonged times. With the help of a 2D device simulation, it is proposed that the observed instabilities are due to charges that are trapped on top of an oxide layer formed around the base electrode. These charges are thermally released after removing the stress, and the device reaches its initial performance after around 24–48 h.