Comparison of 3C-SiC and 4H-SiC Power MOSFETs
Comparison of 3C-SiC and 4H-SiC Power MOSFETs
复制标题
3C-SiC 和 4H-SiC 功率 MOSFET 的比较
DOI：
10.4028/www.scientific.net/msf.924.774
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
H. Fardi
中科院分区：
文献类型：
--
作者：
B. van Zeghbroeck;H. Fardi
对3C-SiC和4H-SiC功率mosfet进行了全面的比较，旨在量化和比较器件的导通电阻和开关损耗。为此，相关材料参数的收集采用实验数据或模拟数据。这包括作为掺杂密度函数的体迁移率，作为掺杂函数的击穿场和MOSFET通道迁移率。通过建立器件模型，计算了适当比例器件的导通电阻和击穿电压随阻塞层掺杂密度的变化规律。建立了SPICE模型来研究开关瞬态和开关损耗。仿真结果表明，在所选择的材料参数下，600 V 3C-SiC MOSFET的导通电阻小于4H-SiC MOSFET的一半，器件中的开关损耗也小于4H-SiC MOSFET的一半。
A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of the blocking layer. A SPICE model was constructed to explore the switching transients and switching losses. The simulations indicate that, for the chosen material parameters, a 600 V 3C-SiC MOSFET has an on-resistance, which is less than half that of a 4H-SiC MOSFET as are the switching losses in the device.