Thin PSG Process for 4H-SiC MOSFET
Thin PSG Process for 4H-SiC MOSFET
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适用于 4H-SiC MOSFET 的薄 PSG 工艺
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
John R. Williams
中科院分区：
文献类型：
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作者：
Y. Sharma;A. Ahyi;T. Isaacs;A. Modic;Yi Xu;Eric Granfukel;M. Jennings;C. Fisher;S. Thomas;P. Mawby;S. Dhar;L. Feldman;John R. Williams
采用磷作为SiO_2/4 H-SiC界面钝化剂，使4 H-SiC MOSFET的场效应沟道迁移率提高到30- 40 cm ~ 2/V-s，是在一氧化氮（NO）中高温退火时的两倍。使用固体SiP 2 O 7平面扩散源来产生用于界面钝化的P2 O 5。将磷掺入SiO2中导致磷硅酸盐玻璃（PSG）的形成，已知磷硅酸盐玻璃是导致器件不稳定的极性材料。如本摘要所述，采用一种新的改进的薄磷（P）钝化工艺，我们可以显著提高MOSFET的稳定性，迁移率约为75 cm 2/V. s。
The use of phosphorous as a passivating agent for the SiO2/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm2/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP2O7 planar diffusion source is used to produce P2O5 for the passivation of the interface. Incorporation of phosphorous into SiO2 leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm2/V.s.