Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl2 inductively coupled plasma
Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl2 inductively coupled plasma
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DOI：
10.1063/1.1360784
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发表时间：
2001-03
影响因子：
4
通讯作者：
Ho Won Jang;C. Jeon;J. Kim;Jong‐Lam Lee
中科院分区：
文献类型：
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作者：
Ho Won Jang;C. Jeon;J. Kim;Jong‐Lam Lee
采用Cl 2等离子体对n型GaN进行表面处理，制备了室温Ti/Al欧姆接触。通过该处理，比接触电阻率从肖特基行为显著降低到9.4×10−6 Ω cm 2。经等离子体处理后，Ga-N键的结合能和Ga/N原子比同时增加。这提供了证据，N空位，作为电子的施主，产生在蚀刻表面，导致费米能级的位移附近的导带。这导致接触电阻率的降低，通过减少肖特基势垒的电子传导。
A room-temperature Ti/Al Ohmic contact on n-type GaN was obtained by surface treatment using Cl2 inductively coupled plasma treatment. The specific contact resistivity was dramatically decreased from the Schottky behavior to 9.4×10−6 Ω cm2 by the treatment. The binding energy of the Ga–N bond and the atomic ratio of Ga/N were simultaneously increased after the plasma treatment. This provides evidence that N vacancies, acting as donors for electrons, were produced at the etched surface, resulting in a shift of the Fermi level near to the conduction band. This leads to the reduction in contact resistivity through the decrease of the Schottky barrier for the conduction of electrons.