Coupled ion redistribution and electronic breakdown in low-alkali boroaluminosilicate glass
Coupled ion redistribution and electronic breakdown in low-alkali boroaluminosilicate glass
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低碱硼铝硅酸盐玻璃中离子再分布与电子击穿耦合
DOI：
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发表时间：
2015
期刊：
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通讯作者：
M. Lanagan
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文献类型：
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作者：
D. Choi;C. Randall;E. Furman;M. Lanagan
具有高静电能量存储的电介质必须在升高的温度下具有特别高的介电击穿强度。设计高性能电介质的另一个重要考虑因素是了解击穿强度的厚度和温度依赖性。在这里，我们开发了一个数值模型，假设耦合的离子再分配和电子击穿应用于预测低碱玻璃的击穿强度。利用Na+、H+/H3 O+、Ba 2+三种可能的载流子的离子电荷输运，计算了低碱硼铝硅酸盐中的离子耗尽宽度，为进一步的击穿建模提供了依据。该模型预测的击穿强度在108-109 V/m的范围内，也占实验观察到的两个不同的厚度依赖区域的击穿。此外，该模型成功地预测了从室温到150 °C的低碱玻璃的温度依赖性击穿强度。该模型显示，…
Dielectrics with high electrostatic energy storage must have exceptionally high dielectric breakdown strength at elevated temperatures. Another important consideration in designing a high performance dielectric is understanding the thickness and temperature dependence of breakdown strengths. Here, we develop a numerical model which assumes a coupled ionic redistribution and electronic breakdown is applied to predict the breakdown strength of low-alkali glass. The ionic charge transport of three likely charge carriers (Na+, H+/H3O+, Ba2+) was used to calculate the ionic depletion width in low-alkali boroaluminosilicate which can further be used for the breakdown modeling. This model predicts the breakdown strengths in the 108–109 V/m range and also accounts for the experimentally observed two distinct thickness dependent regions for breakdown. Moreover, the model successfully predicts the temperature dependent breakdown strength for low-alkali glass from room temperature up to 150 °C. This model showed tha...