Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale
Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale
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晶圆级高度有序的 InGaN/GaN 椭圆纳米棒阵列的激子复合和光提取显着增强
DOI：
10.1088/0957-4484/27/1/015301
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发表时间：
2016-01-08
期刊：
影响因子：
3.5
通讯作者：
Zhang, Rong
中科院分区：
文献类型：
--
作者：
Zhuang, Zhe;Guo, Xu;Zhang, Rong
利用我们开发的软UV固化纳米压印光刻技术在硅片上制备了一系列高度有序的c面InGaN/GaN椭圆纳米棒阵列。NR样品的光致发光（PL）的积分强度显示出显着的增强的一个因素，高达两个数量级相比，其相应的生长样品在室温下。NR样品中的辐射复合被发现大大增强，这不仅是由于抑制非辐射复合，但也应变弛豫和光波导效应。结果表明，椭圆形NR阵列极大地提高了光的提取，并具有偏振发射，这可能是由于结构对称性破缺的结果。最终实现了绿色NR发光二极管，具有良好的电流-电压特性，发光均匀。
A series of highly ordered c-plane InGaN/GaN elliptic nanorod (NR) arrays were fabricated by our developed soft UV-curing nanoimprint lithography on a wafer. The photoluminescence (PL) integral intensities of NR samples show a remarkable enhancement by a factor of up to two orders of magnitude compared with their corresponding as-grown samples at room temperature. The radiative recombination in NR samples is found to be greatly enhanced due to not only the suppressed non-radiative recombination but also the strain relaxation and optical waveguide effects. It is demonstrated that elliptic NR arrays improve the light extraction greatly and have polarized emission, both of which possibly result from the broken structure symmetry. Green NR light-emitting diodes have been finally realized, with good current-voltage performance and uniform luminescence.