Low voltage I–V characteristics in magnetic tunneling junctions
Low voltage I–V characteristics in magnetic tunneling junctions
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DOI：
10.1063/1.1433168
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发表时间：
2001-06
影响因子：
4
通讯作者：
G. Cabrera;N. García
中科院分区：
文献类型：
--
作者：
G. Cabrera;N. García
We show that elastic currents, which take into account variations of the tunneling transmission with voltage and a large ratio of majority to minority spin densities of states of the conduction band at the Fermi level, can account for the low voltage current anomalies observed in magnet–oxide–magnet junctions.
