Numerical analysis of a high-frequency carrier-type magnetic sensor.
Numerical analysis of a high-frequency carrier-type magnetic sensor.
复制标题
高频载波型磁传感器的数值分析。
DOI：
10.3379/jmsjmag.24.331
复制
发表时间：
2000
影响因子：
--
通讯作者：
M. Kobayashi
中科院分区：
文献类型：
--
作者：
A. Kuroe;A. Murata;S. Muramatsu;M. Kobayashi
采用磁控溅射技术制作了高频载波式磁传感器的大尺寸元件，并对元件的阻抗变化率进行了实验和理论研究。发现阻抗的电阻分量急剧变化，并且使用Fe-Ta-N膜测量阻抗变化率为87%。根据理论公式计算出，在0.5 μm的磁道宽度下，高频信号电平为5 mVpp/μm，阻抗变化率为94
Large-scale elements of high-frequency carrier-type magnetic sensors were fabricated by using the photolithographic technique, and the impedance variation rate of the elements was investigated experimentally and theoretically. It was found that the resistance component of the impedance varied drastically, and the impedance variation rate was measured at 87 %, using an Fe-Ta-N film. A high-frequency signal level of 5 mVpp/μm and an impedance variation rate of 94 % for a 0.5 μm track width were calculated by using theoretical formula