Cu(In1-xGax)S2 Thin-Film Solar Cells with Efficiency above 12%, Fabricated by Sulfurization
Cu(In1-xGax)S2 Thin-Film Solar Cells with Efficiency above 12%, Fabricated by Sulfurization
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Cu(In1-xGax)S2%20薄膜%20太阳能%20电池%20with%20效率%20above%2012%,%20制造%20by%20硫化
DOI：
10.1143/jjap.38.l748
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发表时间：
1999
影响因子：
1.5
通讯作者：
K. Ito
中科院分区：
文献类型：
--
作者：
Tsuyoshi Ohashi;Y. Hashimoto;K. Ito
使用异质结构制造了一种高效的薄膜光伏电池，该异质结构由通过 Cu-In-GaS 前驱体硫化获得的 Cu(In1-xGax)S2 吸收层、化学浴沉积的 CdS 缓冲层和射频磁控溅射 In2O3 窗口层组成。当将前体以7℃/min的速率加热至硫化温度(550℃)时，在吸收层的表面上观察到小丘的生长。根据能量色散X射线分析，导致电池性能恶化的小丘由富含铟的化合物组成。如果使用快速热处理大幅提高加热速率，特别是在 300°C 至 550°C 的温度范围内，则可以防止它们的生长。使用无小丘的 Cu(In1-xGax)S2 薄膜实现了高达 12.3% 的转换效率。
An efficient thin-film photovoltaic cell has been fabricated using a heterostructure consisting of a Cu(In1-xGax)S2 absorber layer obtained by sulfurization of a Cu–In–GaS precursor, a chemical-bath-deposited CdS buffer layer and an rf-magnetron sputtered In2O3 window layer. The growth of hillocks was observed on the surface of the absorber layer when the precursor was heated to the sulfurization temperature (550°C) at the rate of 7°C/min. According to energy-dispersive X-ray analysis, the hillocks, which cause the deterioration of cell performance, are composed of an indium-rich compound. Their growth could be prevented if the heating rate were greatly increased, particularly in a temperature range between 300°C and 550°C, using a rapid thermal process. A conversion efficiency of up to 12.3% has been achieved with a hillock-free Cu(In1-xGax)S2 thin film.