Nanowires for integrated multicolor nanophotonics
Nanowires for integrated multicolor nanophotonics
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DOI：
10.1002/smll.200400030
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发表时间：
2005-01-01
期刊：
影响因子：
13.3
通讯作者：
Lieber, CM
中科院分区：
文献类型：
--
作者：
Huang, Y;Duan, XF;Lieber, CM
纳米级发光二极管（nanoLED）的颜色跨越紫外到近红外区域的电磁光谱，使用基于溶液的方法，其中发射电子掺杂的半导体纳米线组装与非发射空穴掺杂的硅纳米线在交叉纳米线架构。单和双nanoLED器件和阵列由III-V和H-VI纳米线构建块的带隙以可预测的方式指定颜色制成。该方法被扩展到联合收割机结合纳米级电子和光子器件到集成结构中，其中纳米级晶体管被用来开关nanoLED。此外，该方法被推广到由组装在光刻图案化的平面硅结构上的纳米线发射器组成的混合器件，这可以提供一种将光子器件与传统硅微电子器件集成的途径。最后，nanoLED用于光学激发发射分子和纳米团簇，因此可以实现一系列具有多重分析能力的集成传感器/检测“芯片”。
Nanoscale light-emitting diodes (nanoLEDs) with colors spanning the ultraviolet to near-infrared region of the electromagnetic spectrum were prepared using a solution-based approach in which emissive electron-doped semiconductor nanowires were assembled with nonemissive hole-doped silicon nanowires in a crossed nanowire architecture. Single- and multicolor nanoLED devices and arrays were made with colors specified in a predictable way by the bandgaps of the III-V and H-VI nanowire building blocks. The approach was extended to combine nanoscale electronic and photonic devices into integrated structures, where a nanoscale transistor was used to switch the nanoLED on and off In addition, this approach was generalized to hybrid devices consisting of nanowire emitters assembled on lithographically patterned planar silicon structures, which could provide a route for integrating photonic devices with conventional silicon microelectronics. Lastly, nanoLEDs were used to optically excite emissive molecules and nanoclusters, and hence could enable a range of integrated sensor/detection "chips" with multiplexed analysis capabilities.