Quantum Dot Formation in Controllably Doped Graphene Nanoribbon
Quantum Dot Formation in Controllably Doped Graphene Nanoribbon
复制标题
可控掺杂石墨烯纳米带中量子点的形成
DOI：
10.1021/acsnano.9b02935
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发表时间：
2019
期刊：
影响因子：
17.1
通讯作者：
Mizuta Hiroshi
中科院分区：
文献类型：
--
作者：
Wang Zhongwang;Yuan Yahua;Liu Xiaochi;Sun Jian;Muruganathan Manoharan;Mizuta Hiroshi
通过改变电子束曝光剂量，实现了氢倍半硅氧烷（HSQ）对石墨烯的可控掺杂。使用HSQ作为掺杂剂，精细分辨率的电子束抗蚀剂使我们能够选择性地掺杂石墨烯，具有几纳米的极高空间分辨率。因此，我们可以设计和演示单量子点（QD）的输运在石墨烯纳米颗粒（GNR）的开放的能隙。此外，我们提出了一个粗略的几何设计规则，其中需要一个相对较短和较宽的GNR来观察单量子点输运。我们设想，这种方法可以用于其他材料和其他应用，如p-n结和隧道场效应晶体管。
We introduce the controllable doping from hydrogen silsesquioxane (HSQ) to graphene by changing its electron-beam exposure dose. Using HSQ as the dopant, a fine-resolution electron-beam resist allows us to selectively dope graphene with an extremely high spatial resolution of a few nanometers. Therefore, we can design and demonstrate the single quantum dot (QD)-like transport in the graphene nanoribbon (GNR) with the opening of the energy gap. Moreover, we suggest a rough geometric design rule in which a relatively short and wide GNR is required for observing the single QD-like transport. We envisage that this method can be utilized for other materials and for other applications, such as p–n junctions and tunnel field-effect transistors.